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STL4N10F7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL4N10F7 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page  This is information on a product in full production. March 2014 DocID023898 Rev 4 1/14 STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Figure 1. Internal schematic diagram Features • N-channel enhancement mode • Lower R DS(on) x area vs previous generation • 100% avalanche rated Applications • Switching applications Description This device utilizes the 7 th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. PowerFLAT™ 3.3x3.3 1 2 3 4 D(5, 6, 7, 8) G(4) S(1, 2, 3) 8 12 3 4 7 6 5 AM15810v1 Order code VDS RDS(on) max ID STL4N10F7 100 V 0.07 Ω 4.5 A Table 1. Device summary Order code Marking Package Packaging STL4N10F7 4N1F7 PowerFLAT™ 3.3x3.3 Tape and reel www.st.com |
Similar Part No. - STL4N10F7 |
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Similar Description - STL4N10F7 |
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