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STL4N10F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL4N10F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() DocID023898 Rev 4 5/14 STL4N10F7 Electrical characteristics 14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 4.5 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 18 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5 % Forward on voltage I SD = 2.25 A, V GS =0 - 1.1 V t rr Reverse recovery time I SD = 2.25 A, di/dt = 100 A/μs, V DD = 80 V, Tj=150 °C (see Figure 18) -30 ns Q rr Reverse recovery charge - 24 nC I RRM Reverse recovery current - 1.6 A |
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