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DFE252012C Datasheet(PDF) 5 Page - MagnaChip Semiconductor.

Part # DFE252012C
Description  Dual Output LCD Bias IC
PDF  17 Pages
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Manufacturer  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

DFE252012C Datasheet(HTML) 5 Page - MagnaChip Semiconductor.

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Confidential
Datasheet Version 1.1
Mar. 2015. Revision 1.1
MagnaChip Semiconductor Ltd.
5
ELECTRICAL CHARACTERISTICS
VIN = 3.8 V, ENN = ENP = VIN, VPOS = 5.0 V, VNEG =
–5.0 V, TA = –40°C to 85°C; typical values are at TA = 25°C
(unless otherwise noted).
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
General Section
VIN
Input Voltage Range
2.8
5.5
V
VUVLO
Under Voltage Lock Out
Rising Threshold voltage
2.6
2.8
V
Falling Threshold Voltage
2.1
2.3
V
IQ(ON)
Quiescent Current
Enable=High, Switching Mode
1.3
mA
IQ(OFF)
Shutdown Current
Enable=Low
1
3
uA
VIH
Enable High Threshold
1.2
V
VIL
Enable Low Threshold
0.4
V
REN
Enable Pull down resistance
EN_P/N
(Note1)
200
k
Ω
TSD
Thermal Shutdown Temperature
(Note1)
140
℃
TSD_HYS
Thermal Shutdown Hysteresis
(Note1)
10
℃
Boost Converter_ VREG
ILIMVREG
VREG Current Limit
(Note1)
0.9
1.2
1.5
A
FSW
Boost Switching Frequency
1.44
1.8
2.25
MHz
RONLXPG
Internal MOSFET Switch ON-
Resistance from LXP to GND
IOUT= 100mA
(Note1)
175
mΩ
RONLXPO
Internal MOSFET Switch ON-
Resistance from LXP to VBST
IOUT= 100mA
(Note1)
240
mΩ
ILXPLX
LX Leakage Current
VLXP=5.0V, EN=0V
10
uA
tss
Soft Start time
(Note1)
0.7
2
ms
Negative Charge Pump Output _ VNEG
VNEG
Negative Output Voltage Range
-4.0
-5.7
V
VNEG Output voltage Accuracy
2.8V<VIN<5.5V
TA =
–40°C to 85°C
-1.5
1.5
%
FSWN
Charge Pump Switching
Frequency
0.8
1.0
1.2
MHz
Line Regulation
∆VIN=1V, INEG=30mA
(Note1)
0.04
%/V
Load Regulation
(Note1)
0.19
%/50mA
ICPLX
CP Leakage Current
VCP=6.0V, EN=0V
10
uA
RDISCH
Discharge Resistance
(Note1)
20
Ω
tSSVNEG
VNEG Soft Start time
(Note1)
0.7
2
ms
LDO Output _ VPOS
VPOS
Positive Output Voltage Range
4.0
5.7
V
VPOS Output voltage Accuracy
2.8V<VIN<5.5V
TA =
–40°C to 85°C
-1.5
1.5
%
VDRP1
Dropout Voltage LDO
IPOS=100mA
100
mV
Line Regulation
∆VIN=1V, IPOS=30mA
(Note1)
0.04
%/V
Load Regulation
(Note1)
0.31
%/50mA
ILDOLX
VPOS Leakage Current
VPOS=0V, EN=0V
1
uA
RDISCH
Discharge Resistance
(Note1)
70
Ω
tSSVPOS
VPOS Soft Start time
(Note1)
0.7
2
ms



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