General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent digital pre-distortion capability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range