1.

Product profile

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

[2]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Designed for broadband operation (2000 MHz to 2200 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent digital pre-distortion capability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2000 MHz to 2200 MHz frequency range

BLF7G22L-130;

BLF7G22LS-130

Power LDMOS transistor

Rev. 3 — 18 November 2010

Product data sheet

Table 1.

Typical performance

Mode of operation

f

η

D

ACPR

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

2110 to 2170

950

28

30

18.5

32

−32[1]

1-carrier W-CDMA

2110 to 2170

950

28

33

18.5

33

−39[2]