BLF7G22L-130_7G22LS-130

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Product data sheet

Rev. 3 — 18 November 2010

6 of 15

NXP Semiconductors

BLF7G22L-130; BLF7G22LS-130

Power LDMOS transistor

7.4 1-carrier W-CDMA

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.

(1) f = 2112.5 MHz

(2) f = 2140 MHz

(3) f = 2167.5 MHz

(1) f = 2112.5 MHz

(2) f = 2140 MHz

(3) f = 2167.5 MHz

Fig 5.

Power gain as a function of load power;

typical values

Fig 6.

Drain efficiency as a function of load power;

typical values

(1) f = 2112.5 MHz

(2) f = 2140 MHz

(3) f = 2167.5 MHz

(1) f = 2112.5 MHz

(2) f = 2140 MHz

(3) f = 2167.5 MHz

Fig 7.

Adjacent channel power ratio (5MHz) as a

function of load power; typical values

Fig 8.

Peak-to-average power ratio as a function of

load power; typical values

001aal345

090

60

30

17

18

16

19

20

(dB)

15

(3)

(2)

(1)

001aal346

090

60

30

20

40

60

(%)

0

(1)

(2)

(3)

001aal348

090

60

30

−40

−20

0

(dBc)

−60

(1)

(2)

(3)

001aal347

090

60

30

4

2

6

8

PAR

(dB)

0

(1)

(2)

(3)