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BLF7G22LS-130 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF7G22LS-130 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page ![]() BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 18 November 2010 5 of 15 NXP Semiconductors BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor 7.3 1 Tone CW VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 2. Power gain as a function of load power; typical values Fig 3. Drain efficiency as a function of load power; typical values VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Input return loss as a function of load power; typical values PL (W) 0 160 120 40 80 001aal341 16 17 15 18 19 Gp (dB) 14 (1) (2) (3) PL (W) 0 160 120 40 80 001aal342 20 40 60 ηD (%) 0 (1) (2) (3) 001aal352 PL (W) 0 RLin (dB) −30 −20 −10 070 30 60 40 50 10 20 (3) (2) (1) |
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