BLF7G22L-130_7G22LS-130

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Product data sheet

Rev. 3 — 18 November 2010

8 of 15

NXP Semiconductors

BLF7G22L-130; BLF7G22LS-130

Power LDMOS transistor

7.6 2-carrier W-CDMA (10 MHz carrier spacing)

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.

(1) f = 2117.5 MHz

(2) f = 2140 MHz

(3) f = 2162.5 MHz

(1) f = 2117.5 MHz

(2) f = 2140 MHz

(3) f = 2162.5 MHz

Fig 12. Power gain as a function of load power;

typical values

Fig 13. Drain efficiency as a function of load power;

typical values

(1) f = 2117.5 MHz

(2) f = 2140 MHz

(3) f = 2162.5 MHz

(1) f = 2117.5 MHz

(2) f = 2140 MHz

(3) f = 2162.5 MHz

Fig 14. Adjacent channel power ratio (5 MHz) as a

function of load power; typical values

Fig 15. Adjacent channel power ratio (10 MHz) as a

function of load power; typical values

001aal355

20

(dB)

15

17

19

16

18

070

30

60

40

50

10

20

(3)

(2)

(1)

001aal356

20

30

10

40

50

(%)

0

070

30

60

40

50

10

20

(1)

(2)

(3)

001aal357

0

(dBc)

−60

−40

−20

070

30

60

40

50

10

20

(1)

(3)

(2)

001aal358

0

(dBc)

−60

−40

−20

070

30

60

40

50

10

20

(1)

(3)

(2)