BLF7G22LS-130 datasheet(3/15 Pages) NXP

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BLF7G22L-130_7G22LS-130

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Product data sheet

Rev. 3 — 18 November 2010

3 of 15

NXP Semiconductors

BLF7G22L-130; BLF7G22LS-130

Power LDMOS transistor

Thermal characteristics

Characteristics

Test information

7.1 Ruggedness in class-AB operation

The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS =28V; IDq =950 mA; PL = 130 W (CW); f = 2110 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =80 °C; PL =30 W

0.35

K/W

Table 6.

Characteristics

Tj = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0V; ID =1.5 mA

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 150 mA

1.3

1.8

2.3

IDSS

drain leakage current

VGS =0V; VDS =28V

μA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

29.5

IGSS

gate leakage current

VGS =11V; VDS = 0 V

450

gfs

forward transconductance

VDS =10V; ID =7.5 A

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =5.25A

0.1

0.16

Table 7.

Functional test information

Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 64 DPCH; f1 =2112.5MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;

RF performance at VDS =28V; IDq = 950 mA; Tcase =25 °C; unless otherwise specified; in a

class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

power gain

PL(AV) =30W

18.5 -

RLin

input return loss

PL(AV) =30W

−15 −19

drain efficiency

PL(AV) =30W

ACPR

adjacent channel power ratio

PL(AV) =30W

−31 −28

dBc

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