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IMX7SCEC Datasheet(PDF) 69 Page - NXP Semiconductors |
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IMX7SCEC Datasheet(HTML) 69 Page - NXP Semiconductors |
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69 / 152 page ![]() Electrical characteristics i.MX 7Solo Family of Applications Processors Datasheet, Rev. 5, 07/2017 NXP Semiconductors 69 Figure 37. Read Data Latch cycle timing diagram (EDO mode) Table 49. Asynchronous mode timing parameters1 1 GPMI’s Asynchronous mode output timing can be controlled by the module’s internal registers HW_GPMI_TIMING0_ADDRESS_SETUP, HW_GPMI_TIMING0_DATA_SETUP, and HW_GPMI_TIMING0_DATA_HOLD. This AC timing depends on these registers settings. In the table, AS/DS/DH represents each of these settings. ID Parameter Symbol Timing T = GPMI Clock Cycle Unit Min. Max. NF1 NAND_CLE setup time tCLS (AS + DS) × T - 0.12 [see notes2,3] 2 AS minimum value can be 0, while DS/DH minimum value is 1. 3 T = GPMI clock period -0.075ns (half of maximum p-p jitter). ns NF2 NAND_CLE hold time tCLH DH × T - 0.72 [see note2]ns NF3 NAND_CE0_B setup time tCS (AS + DS + 1) × T [see notes3,2]ns NF4 NAND_CE0_B hold time tCH (DH+1) × T - 1 [see note2]ns NF5 NAND_WE_B pulse width tWP DS × T [see note2]ns NF6 NAND_ALE setup time tALS (AS + DS) × T - 0.49 [see notes3,2]ns NF7 NAND_ALE hold time tALH (DH × T - 0.42 [see note2]ns NF8 Data setup time tDS DS × T - 0.26 [see note2]ns NF9 Data hold time tDH DH × T - 1.37 [see note2]ns NF10 Write cycle time tWC (DS + DH) × T [see note2]ns NF11 NAND_WE_B hold time tWH DH × T [see note2]ns NF12 Ready to NAND_RE_B low tRR4 4 NF12 is guaranteed by the design. (AS + 2) × T [see 3,2]— ns NF13 NAND_RE_B pulse width tRP DS × T [see note2]ns NF14 READ cycle time tRC (DS + DH) × T [see note2]ns NF15 NAND_RE_B high hold time tREH DH × T [see note2]ns NF16 Data setup on read tDSR — (DS × T -0.67)/18.38 [see notes5,6] 5 Non-EDO mode. 6 EDO mode, GPMI clock ≈ 100 MHz (AS=DS=DH=1, GPMI_CTL1 [RDN_DELAY] = 8, GPMI_CTL1 [HALF_PERIOD] = 0). ns NF17 Data hold on read tDHR 0.82/11.83 [see notes5,6]— ns |
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