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ZSSC3240CC1B Datasheet(PDF) 8 Page - Renesas Technology Corp |
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ZSSC3240CC1B Datasheet(HTML) 8 Page - Renesas Technology Corp |
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8 / 64 page ![]() ZSSC3240 Datasheet Nov.27.20 Page 8 3. Absolute Maximum Ratings The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause permanent damage to the device. Functional operation of the ZSSC3240 at absolute maximum ratings is not implied. Exposure to absolute maximum rating conditions might affect device reliability. Table 2. Absolute Maximum Ratings Symbol Parameter Conditions Minimum Maximum Units TJ Junction temperature 135 °C TS Storage temperature -45 150 °C ESD – Human Body Model 4000 V ESD – Charged Device Model 750 V Latch-up -100 +100 mA VDD_max Maximum allowed for voltage supply Referenced to VSS. -0.3 6.5 V VIF_max Voltage at digital interface pins I2C pins: SDA, SCL -0.3 5.5 V VFB_max Voltage at FB pin 4mA to 20mA current loop interface -2 2 V 4. Recommended Operating Conditions Table 3. Recommended Operating Conditions Symbol Parameter Minimum Typical Maximum Units VDD Power supply voltage 2.7 – 5.5 V TA Ambient temperature (depending on the part code) -40 – 125 °C CVDD External (parasitic) capacitance between VDD and VSS, without external supply transistor regulation 0 10 – nF External (parasitic) capacitance between VDD and VSS, with (optional) external supply transistor regulation 80 100 120 CVDDB,EMC Recommended, external capacitance between VDDB and VSS for electro-magnetic immunity (EMI) 0 6.8 8 nF CAOUT,EMC Recommended, external capacitance between AOUT versus VSS, and versus VDD for EMI [a] 0 22 33 nF ISensor Load current through external sensor element [b] 0.02 0.5 4 mA VDioDrop External temperature diode and RTD input range, drop over external element referenced to TEXT pin -0.2 – 1 V VSens_in Absolute sensor signal input level, INN, INP pins 0.5 – 1.2 V VDDBratio_min Minimum level at VDDB [b] 0.9 – – V VSSBratio_max Maximum level at VSSB [b] - – 0.7 V Imax_AOUT_V Maximum current load at AOUT pin for voltage outputs - - 18 mA SRVDD_POR Recommended VDD rise slew rate for power-on-reset (POR) [c] 1.5 – – V/ms [a] For applications with OWI-interface or analog voltage-output. [b] With ratiometric sensor supply configuration; e.g. a ratiometric bridge or bridge as temperature sensor with internal or external Rt. [c] Per design, there is no (theoretical) minimum VDD slew rate to trigger a clean POR. Nevertheless, a reasonable slew rate is recommended. 5. Electrical Characteristics All parameter values are valid only under specified operating conditions. All voltages are referenced to VSS. Table 4. Electrical Characteristics Note: See important notes at the end of this table. Symbol Parameter Conditions Minimum Typical Maximum Units IC Supply IIC Current consumption, active IC Excluding connected sensor elements (with LDOctrl enabled) – 2.3 2.80 mA IIDLE Idle current consumption, IC in Idle State Typical value at 30°C, maximum value at 85°C (125°C) OWI and LDOctrl disabled – 1.5 6 (22) µA |
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