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ZSSC3240CC1B Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # ZSSC3240CC1B
Description  Sensor Signal Conditioner IC for Resistive Sensors
PDF  64 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ZSSC3240CC1B Datasheet(HTML) 8 Page - Renesas Technology Corp

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ZSSC3240
Datasheet
Nov.27.20
Page 8
3.
Absolute Maximum Ratings
The absolute maximum ratings are stress ratings only. Stresses greater than those listed below can cause
permanent damage to the device. Functional operation of the ZSSC3240 at absolute maximum ratings is not
implied. Exposure to absolute maximum rating conditions might affect device reliability.
Table 2.
Absolute Maximum Ratings
Symbol
Parameter
Conditions
Minimum
Maximum
Units
TJ
Junction temperature
135
°C
TS
Storage temperature
-45
150
°C
ESD
– Human Body Model
4000
V
ESD
– Charged Device Model
750
V
Latch-up
-100
+100
mA
VDD_max
Maximum allowed for voltage supply
Referenced to VSS.
-0.3
6.5
V
VIF_max
Voltage at digital interface pins
I2C pins: SDA, SCL
-0.3
5.5
V
VFB_max
Voltage at FB pin
4mA to 20mA current loop
interface
-2
2
V
4.
Recommended Operating Conditions
Table 3.
Recommended Operating Conditions
Symbol
Parameter
Minimum
Typical
Maximum
Units
VDD
Power supply voltage
2.7
–
5.5
V
TA
Ambient temperature (depending on the part code)
-40
–
125
°C
CVDD
External (parasitic) capacitance between VDD and VSS,
without external supply transistor regulation
0
10
–
nF
External (parasitic) capacitance between VDD and VSS, with
(optional) external supply transistor regulation
80
100
120
CVDDB,EMC
Recommended, external capacitance between VDDB and
VSS for electro-magnetic immunity (EMI)
0
6.8
8
nF
CAOUT,EMC
Recommended, external capacitance between AOUT versus
VSS, and versus VDD for EMI [a]
0
22
33
nF
ISensor
Load current through external sensor element [b]
0.02
0.5
4
mA
VDioDrop
External temperature diode and RTD input range, drop over
external element referenced to TEXT pin
-0.2
–
1
V
VSens_in
Absolute sensor signal input level, INN, INP pins
0.5
–
1.2
V
VDDBratio_min
Minimum level at VDDB [b]
0.9
–
–
V
VSSBratio_max
Maximum level at VSSB [b]
-
–
0.7
V
Imax_AOUT_V
Maximum current load at AOUT pin for voltage outputs
-
-
18
mA
SRVDD_POR
Recommended VDD rise slew rate for power-on-reset (POR)
[c]
1.5
–
–
V/ms
[a]
For applications with OWI-interface or analog voltage-output.
[b]
With ratiometric sensor supply configuration; e.g. a ratiometric bridge or bridge as temperature sensor with internal or external Rt.
[c]
Per design, there is no (theoretical) minimum VDD slew rate to trigger a clean POR. Nevertheless, a reasonable slew rate is
recommended.
5.
Electrical Characteristics
All parameter values are valid only under specified operating conditions. All voltages are referenced to VSS.
Table 4.
Electrical Characteristics
Note: See important notes at the end of this table.
Symbol
Parameter
Conditions
Minimum
Typical
Maximum
Units
IC Supply
IIC
Current consumption,
active IC
Excluding connected sensor elements
(with LDOctrl enabled)
–
2.3
2.80
mA
IIDLE
Idle current consumption,
IC in Idle State
Typical value at 30°C, maximum value at
85°C (125°C)
OWI and LDOctrl disabled
–
1.5
6
(22)
µA



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