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STGIPQ3H60T-HLS Datasheet(PDF) 17 Page - STMicroelectronics

Part # STGIPQ3H60T-HLS
Description  SLLIMM-nano, 2nd series IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGIPQ3H60T-HLS Datasheet(HTML) 17 Page - STMicroelectronics

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6
Electrical characteristics (curves)
Figure 13. Output characteristics
GADG291020181423OCH
5
4
3
2
1
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
IC
(A)
VCE (V)
VCC = 15 V
Figure 14. Vce(sat) vs collector current
GADG071120181035VCEC
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
VCE
(V)
IC (A)
TJ = 25 °C
VCC = 15 V
TJ = 150 °C
Figure 15. IC vs case temperature
GADG291020181425CCT
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
IC
(A)
TC (°C)
VCC ≥ 15 V, TJ ≤ 150 °C
Figure 16. Diode VF vs forward current
GADG291020181424DVF
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1
2
3
4
5
VF
(V)
IF (A)
TJ = 25 °C
TJ = 150 °C
VCC = 15 V
Figure 17. Eon switching energy vs collector current
GADG291020181425SNC
0.20
0.15
0.10
0.05
0.00
0
1
2
3
4
5
IC (A)
VDD = 300 V, VCC = Vboot = 15 V
TJ = 150 °C
TJ = 25 °C
EON
(mJ)
Figure 18. Eoff switching energy vs collector current
GADG291020181426SFC
0.20
0.15
0.10
0.05
0.00
0
1
2
3
4
5
EOFF
(mJ)
IC (A)
VDD = 300 V, VCC = Vboot = 15 V
TJ = 150 °C
TJ = 25 °C
STGIPQ3H60T-HLS, STGIPQ3H60T-HZS
Electrical characteristics (curves)
DS11141 - Rev 5
page 17/26



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