PLM5177DCPR datasheet(12/54 Pages) TI

12 / 54 page

Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over TJ = –40°C to 150°C. Unless otherwise

stated, V(BIAS) = 12 V

PARAMETER

MIN

TYP

MAX UNIT

Transition (dead) time

HOx from

high to low

and LOx

from low to

high

CG = 3.3 nF

R(RT) = 14.7 kΩ

HOx from

low to high

and LOx

from high to

low

HOx from

high to low

and LOx

from low to

high

R(RT) = 316 k Ω

HOx from

low to high

and LOx

from high to

low

Gate driver low-side

PMOS on-resistance

LO1, LO2

I(test) = 200 mA

1.12

Ω

Gate driver high-side

PMOS on-resistance

HO1, HO2

I(test) = 200 mA

1.16

Ω

Gate driver low-side

NMOS on-resistance

LO1, LO2

I(test) = 200 mA

0.5

Ω

Gate driver low-side

NMOS on-resistance

HO1, HO2

I(test) = 200 mA

0.51

Ω

VTH-

(BST_UV)

Negative-going bootstrap UVLO2

threshold

V(HBx) – V(SWx) falling

2.75

VTH+

(BST_UV)

Positive-going bootstrap

UVLO2 threshold

V(HBx) – V(SWx) rising

2.95

VTH+

(BST_OV)

Positive-going bootstrap over-voltage

threshold

V(HBx) – V(SWx) rising,

I_HBx = 10 mA

VTH

(GATEOUT)

Low-side and high-side gate driver

output switching detection

Referenced to VCC

37%

Referenced to V(HBx) –

V(SWx)

37%

THERMAL SHUTDOWN

TT+J

Thermal shutdown threshold

TJ rising

164

°C

Thermal shutdown hysteresis

°C

R2D INTERFACE

Internal reference resistor

kΩ

LM5177

SNVSBU4A – JUNE 2022 – REVISED OCTOBER 2022

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