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STM32C011F6U6 Datasheet(PDF) 43 Page - STMicroelectronics |
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STM32C011F6U6 Datasheet(HTML) 43 Page - STMicroelectronics |
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43 / 94 page ![]() Table 28. Current consumption in Run mode from SRAM at different die temperatures Symbol Parameter Conditions Typ Max(1) 1. Evaluated by characterization – Not tested in production. Unit General(2) 2. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled. fHCLK Fetch from(3) 3. Code compiled with high optimization for space in SRAM. 25 °C 85 °C 105 °C 125 °C 25 °C 85 °C 105 °C 125 °C IDD(Run) Supply current in Run mode fHCLK = fHSE_bypass (>32.768 kHz), fHCLK = fLSE_bypass (=32.768 kHz) 48 MHz SRAM 2.80 2.90 2.95 3.05 3.20 3.40 3.70 4.20 mA 32 MHz 1.90 1.95 2.00 2.10 2.20 2.40 2.70 3.20 24 MHz 1.45 1.50 1.55 1.65 1.70 1.90 2.20 2.70 16 MHz 0.990 1.05 1.10 1.20 1.20 1.40 1.70 2.20 8 MHz 0.535 0.585 0.635 0.735 0.630 0.860 1.20 1.70 4 MHz 0.305 0.355 0.405 0.505 0.380 0.630 0.900 1.40 2 MHz 0.195 0.240 0.295 0.390 0.250 0.500 0.770 1.30 1 MHz 0.135 0.185 0.235 0.335 0.180 0.430 0.710 1.30 500 kHz 0.110 0.155 0.205 0.305 0.150 0.400 0.670 1.20 125 kHz 0.0865 0.135 0.185 0.285 0.130 0.370 0.650 1.20 32.768 kHz 0.082 0.130 0.180 0.280 0.120 0.370 0.640 1.20 fHCLK = fHSI48/HSIDIV ( > 32 kHz), fHCLK = fLSI ( = 32 kHz) 48 MHz 3.15 3.20 3.25 3.30 3.50 3.70 3.90 4.40 24 MHz 1.90 1.95 2.00 2.05 2.10 2.30 2.60 3.10 12 MHz 1.30 1.30 1.35 1.45 1.50 1.70 1.90 2.40 6 MHz 0.965 0.995 1.05 1.15 1.15 1.30 1.60 2.10 3 MHz 0.810 0.835 0.880 0.970 0.900 1.20 1.40 1.90 1.5 MHz 0.730 0.760 0.800 0.890 0.810 1.10 1.30 1.80 750 kHz 0.690 0.720 0.765 0.855 0.770 0.990 1.30 1.80 375 kHz 0.670 0.700 0.745 0.835 0.750 0.970 1.30 1.80 32 kHz 0.082 0.130 0.180 0.280 0.120 0.370 0.640 1.20 |
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