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DRV5032 Datasheet(PDF) 4 Page - Texas Instruments

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Part # DRV5032
Description  DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor
PDF  39 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DRV5032 Datasheet(HTML) 4 Page - Texas Instruments

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Power supply voltage
VCC
–0.3
5.5
V
Power supply voltage slew rate
VCC
Unlimited
V / µs
Output voltage
OUT, OUT1, OUT2
–0.3
VCC + 0.3
V
Output current
OUT, OUT1, OUT2
–5
5
mA
Magnetic flux density, BMAX
Unlimited
T
Junction temperature, TJ
105
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
±6000
V
Charged-device model (CDM), per JEDEC specification
JESD22-C101(2)
±750
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Power supply voltage
1.65
5.5
V
VO
Output voltage
0
5.5
V
IO
Output current
–5
5
mA
TA
Operating ambient temperature
–40
85
°C
6.4 Thermal Information
THERMAL METRIC(1)
DRV5032
UNIT
DBZ (SOT-23)
DMR (X2SON)
LPG (TO-92)
3 PINS
4 PINS
3 PINS
RθJA
Junction-to-ambient thermal resistance
356
159
183.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
128
77
74.2
°C/W
RθJB
Junction-to-board thermal resistance
94
102
158.8
°C/W
ΨJT
Junction-to-top characterization parameter
11.4
0.9
15.2
°C/W
ΨJB
Junction-to-board characterization parameter
92
100
158.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
note.
DRV5032
SLVSDC7G – APRIL 2017 – REVISED JULY 2024
www.ti.com
4
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: DRV5032



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