STM8L052R8T6 datasheet(77/109 Pages) STMICROELECTRONICS

77 / 109 page

STM8L052R8

Electrical parameters

Doc ID023337 Rev 2

77/109

Figure 17.

LSE oscillator circuit diagram

Internal clock sources

Subject to general operating conditions for VDD, and TA.

High speed internal RC oscillator (HSI)

In the following table, data are based on characterization results, not tested in production,

unless otherwise specified.

OSC_OUT

OSC_IN

fLSE

CL1

CL2

STM8

Resonator

Consumption

control

Resonator

Table 30.

HSI oscillator characteristics

Symbol

Parameter

Conditions(1)

Min.

Typ.

Max.

Unit

fHSI

Frequency

VDD = 3.0 V

MHz

ACCHSI

Accuracy of HSI

oscillator (factory

calibrated)

VDD = 3.0 V, TA = 25 °C

-1 (2)

1 (2)

1.8 V

≤ VDD ≤ 3.6 V,

-40 °C

≤ TA ≤ 85 °C

-5

TRIM

HSI user trimming

step(3)

Trimming code

≠ multiple of 16

0.4

0.7

Trimming code = multiple of 16

± 1.5

tsu(HSI)

HSI oscillator setup

time (wakeup time)

3.7

6 (4)

µs

IDD(HSI)

HSI oscillator power

consumption

100

140(4)

µA

VDD = 3.0 V, TA = -40 to 85 °C unless otherwise specified.

Tested in production.

The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16

(0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for

more details.

Guaranteed by design, not tested in production

STM8L052R8T6 Datasheet(PDF) 77 Page - STMicroelectronics

STM8L052R8T6 Datasheet(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL