STM8L052R8T6 datasheet(80/109 Pages) STMICROELECTRONICS

Part #	STM8L052R8T6

Description	Value Line, 8-bit ultralow power MCU, 64-KB Flash,256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC

PDF	109 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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80 / 109 page

Electrical parameters

STM8L052R8

80/109

Doc ID023337 Rev 2

Flash memory

Table 33.

Flash program and data EEPROM memory

Symbol

Parameter

Conditions

Min.

Typ.

Max.

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.8

3.6

tprog

Programming time for 1 or 128 bytes (block)

erase/write cycles (on programmed byte)

6ms

Programming time for 1 to 128 bytes (block)

write cycles (on erased byte)

3ms

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

tRET

(2)

Data retention (program memory) after 100

erase/write cycles at TA=−40 to +85 °C

TRET=+85 °C

30(1)

years

Data retention (data memory) after 100000

erase/write cycles at TA=−40 to +85 °C

TRET=+85 °C

30(1)

NRW

(3)

Erase/write cycles (program memory)

TA=−40 to +85 °C

100(1)

cycles

Erase/write cycles (data memory)

100(1)

(4)

kcycles

Data based on characterization results, not tested in production.

Conforming to JEDEC JESD22a117

The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

Data based on characterization performed on the whole data memory.

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