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25CS160-H/ST Datasheet(PDF) 24 Page - Microchip Technology

Part # 25CS160-H/ST
Description  16-Kbit SPI Serial EEPROM with 128-Bit Serial Number
PDF  53 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

25CS160-H/ST Datasheet(HTML) 24 Page - Microchip Technology

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 2026 Microchip Technology Inc. and its subsidiaries
Preliminary
DS20007008B-page 24
25CS160
8.0
WRITE SEQUENCES
To program the EEPROM in the 25CS160, the device
must be write-enabled via the Write Enable (WREN)
instruction. If the device is not write-enabled, it will
ignore the WRITE instruction and will return to the
Standby state when CS is brought high. The address of
the memory location(s) to be programmed must be
outside the protected address range(s) selected by the
Block Write Protection level. During an internal write
cycle, all instructions will be ignored except the RDSR
instruction.
8.1
Write Instruction Sequences
8.1.1
BYTE WRITE
Once a WREN instruction has been completed, a byte
write sequence can be performed, as shown in
Figure 8-1. After the CS line is pulled low to select the
device, the WRITE (02h) instruction is transmitted via
the SI line, followed by the 16-bit address and the data
(D7-D0) to be programmed.
Address bits A15 through A11 are “don't care” bits
because they do not fall within the addressable
memory range.
Programming will start after the CS pin is brought high.
The low-to-high transition of the CS pin must occur
during the SCK low time (Mode 0) and SCK high time
(Mode 3) immediately after clocking in the D0 (LSB)
data bit.
The 25CS160 is automatically returned to the Write
Disable state (STATUS register bit WEL = 0) at the
completion of a write cycle.
FIGURE 8-1:
BYTE WRITE SEQUENCE
8.1.2
PAGE WRITE
A page write sequence is the same as a byte write;
however, it allows up to 32 bytes to be written in the
same write cycle, provided that all bytes are in the
same page of the memory array (where addresses A10
through A5 are the same). Partial page writes of less
than 32 bytes are allowed. After each byte of data is
received, the five lowest order address bits are
internally incremented by one, and the remaining
address bits remain constant.
If more bytes of data are transmitted than will fit at the
end of that memory page, the address counter will roll
over to the beginning of the same page, and only the
last 32 bytes of data received will be written to the
device.
Upon completion of a write cycle, the 25CS160
automatically returns to the Write Disable state
(STATUS register bit WEL = 0).
Note:
If the CS pin is deasserted anywhere
other than at the end of an 8-bit byte
boundary, the sequence will be aborted,
and no write cycle will take place.
CS
SCK
1
0
234
56 7
9 10 11 12
31
30
29
28
27
26
24
23
22
21
SO
High-Impedance
00 0 0 0 0
1 0
WRITE Opcode (02h)
Address Bits A15-A0
XX X
XX A
SI
D7 D6 D5 D4 D3 D2 D1 D0
Data In
MSb
MSb
MSb
AA A
A
825
Note 1:
This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence.
TWC(1)
Note:
If the CS pin is deasserted anywhere
other than at the end of an 8-bit byte
boundary, the sequence will be aborted,
and no write cycle will take place.



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