H8SLASH3021 datasheet(469/712 Pages) RENESAS

469 / 712 page

15. ROM

Rev.2.00 Mar. 22, 2007 Page 445 of 684

REJ09B0352-0200

Section 15 ROM

15.1

Features

The H8/3022 Group has 256 kbytes of on-chip flash memory. The features of the flash memory

are summarized below.

• Four flash memory operating modes

⎯ Program mode

⎯ Erase mode

⎯ Program-verify mode

⎯ Erase-verify mode

• Programming/erase methods

The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can

be performed. To erase the entire flash memory, each block must be erased in turn. Block

erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.

• Programming/erase times

The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,

equivalent to about 80 µs (typ.) per byte, and the erase time is 100 ms (typ.).

• Reprogramming capability

The flash memory can be reprogrammed up to 100 times.

• On-board programming modes

There are two modes in which flash memory can be programmed/erased/verified on-board:

⎯ Boot mode

⎯ User program mode

• Automatic bit rate adjustment

With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the

transfer bit rate of the host.

• Flash memory emulation in RAM

Flash memory programming can be emulated in real time by overlapping a part of RAM onto

flash memory.

• Protect modes

There are two protect modes, hardware and software, which allow protected status to be

designated for flash memory program/erase/verify operations.

• PROM mode

Flash memory can be programmed/erased in programmer mode, using a PROM programmer,

as well as in on-board PROM mode.

H8/3021 Datasheet(PDF) 469 Page - Renesas Technology Corp