H8SLASH3021 datasheet(621/712 Pages) RENESAS

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Appendix B. Internal I/O Register Field

Rev.2.00 Mar. 22, 2007 Page 597 of 684

REJ09B0352-0200

FLMCR2—Flash Memory Control Register 2

H'41

Flash memory

Bit

321

FLER

—

Initial value

Note : This register is used only in the flash memory versions.

Reading the corresponding address in a mask ROM version will always return

1s, and writes to this address are disabled.

111

Read/Write

—

Flash memory error

Flash memory write/erase protection is disabled (Initial value)

An error has occurred during flash memory writing/erasing

Flash memory error protection is enabled

EBR1—Erase Block Register 1

H'42

Flash memory

Bit

EB7

EB6

EB5

EB4

EB3

EB2

EB1

EB0

Block EB7 to EB0 is not selected (Initial value)

Block EB7 to EB0 is selected

Block 7 to 0

Initial value

Read/Write

R/W

Note: When not erasing, clear all EBR bits to 0.

This register is used only in the flash memory versions. Reading the

corresponding address in a mask ROM version will always return 1s, and

writes to this address are disabled.

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