H8SLASH3028F datasheet(628/923 Pages) RENESAS

628 / 923 page

Rev. 2.00, 09/03, page 598 of 890

MD2–MD0 = 101 or 111

Reset-start

Transfer programming/erase control

program to RAM

Branch to programming/erase control

program in RAM area

FWE = high

(user program mode)

Execute programming/erase control

program in RAM

(flash memory rewriting)

Clear SWE bit, then release FWE

(user program mode clearing)

Branch to application program

in flash memory

Write FWE assessment program and transfer

program (and programming/erase control

program if necessary) beforehand

Notes: 1. Do not apply a constant high level to the FWE pin. A high level should be applied to the

FWE pin only when programming or erasing flash memory (including execution of flash

memory emulation by RAM). Also, while a high level is applied to the FWE pin, the

watchdog timer should be activated to prevent overprogramming or overerasing due to

program runaway, etc.

2. For further information on FWE application and disconnection, see section 18.11, Flash

Memory Programming and Erasing Precautions.

3. In order to execute a normal read of flash memory in user program mode, the

programming/erase program must not be executing. It is thus necessary to ensure that

bits 6 to 0 in FLMCR1 are cleared to 0.

Figure 18.8 Example of User Program Mode Execution Procedure

H8/3028F Datasheet(PDF) 628 Page - Renesas Technology Corp