H8SLASH3028F datasheet(804/923 Pages) RENESAS

804 / 923 page

Rev. 2.00, 09/03, page 774 of 890

EBR (EBR2)—Erase Block Register 2

H'EE033

Flash Memory

Bit

—

EB13

EB12

EB11

EB10

EB9

EB8

Block EB13 to EB8 is not selected (Initial value)

Block EB13 to EB8 is selected

Block 13 to 8

Initial value

Read/Write

R/W

Initial value

Read/Write

Modes 5

and 7

Modes 1 to

4, and 6

Notes: 1. When not erasing, clear EBR to H'00.

A value of 1 cannot be set in this register in mode 6.

2. This register is used only by the flash memory version and do not exist in the mask ROM

version. In the mask ROM version reading these addresses always returns a value of 1,

and it is not possible to write to them.

P2PCR—Port 2 Input Pull-Up Control Register

H'EE03C

Port 2

Bit

Initial value

Read/Write

R/W

P27PCR

R/W

P26PCR

R/W

P25PCR

R/W

P24PCR

R/W

P23PCR

R/W

P22PCR

R/W

P21PCR

R/W

P20PCR

Port 2 input pull-up control 7 to 0

Input pull-up transistor is off

Input pull-up transistor is on

Note: Valid when the corresponding P2DDR bit is cleared to 0

(designating generic input).

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