H8SLASH3028F datasheet(802/923 Pages) RENESAS

802 / 923 page

Rev. 2.00, 09/03, page 772 of 890

FLMCR1—Flash Memory Control Register 1

H'EE030

Flash Memory

Bit

Initial value

Read/Write

1/0

FWE

R/W

SWE

R/W

ESU

R/W

PSU

R/W

Initial value

Read/Write

Modes 5

and 7

Modes 1 to

4, and 6

Program mode cleared (Initial value)

Transition to program mode

[Setting condition]

When FWE = 1, SWE = 1, and PSU = 1

Program mode

Erase mode cleared (Initial value)

Transition to erase mode

[Setting condition]

When FWE = 1, SWE = 1, and ESU = 1

Erase mode

Program-verify mode cleared (Initial value)

Transition to program-verify mode

[Setting condition]

When FWE = 1 and SWE = 1

Program-verify mode

Erase-verify mode cleared (Initial value)

Transition to erase-verify mode

[Setting condition]

When FWE = 1 and SWE = 1

Erase-verify mode

Program setup cleared (Initial value)

Program setup

[Setting condition]

When FWE = 1 and SWE = 1

Program setup

Erase setup cleared (Initial value)

Erase setup

[Setting condition]

When FWE = 1 and SWE = 1

Erase setup bit

Write/erase disabled (Initial value)

Write/erase enabled

[Setting condition]

When FWE = 1

Software write enable bit

When a low level is input to the FWE pin (hardware protection state)

When a high level is input to the FWE pin

Flash write enable bit

Notes: 1. This register is used only in the flash memory.

Reading the corresponding address in a mask ROM version will always return 1s, and writes to this address are disabled.

2. Fix the FWE pin low in mode 6.

H8/3028F Datasheet(PDF) 802 Page - Renesas Technology Corp

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