M38K09RFS datasheet(99/328 Pages) RENESAS

99 / 328 page

FUNCTIONAL DESCRIPTION

Rev.2.00

Oct 05, 2006

page 82 of 112

38K0 Group

REJ09B0337-0200

HARDWARE

FLASH MEMORY MODE

The 38K0 group’s flash memory version has an internal new

DINOR (DIvided bit line NOR) flash memory that can be rewritten

with a single power source when VCC is 4.5 to 5.25 V, and 2 power

sources when VCC is 3.0 to 4.5 V.

For this flash memory, three flash memory modes are available in

which to read, program, and erase: the parallel I/O and standard

serial I/O modes in which the flash memory can be manipulated

using a programmer and the CPU rewrite mode in which the flash

memory can be manipulated by the Central Processing Unit

(CPU).

Summary

Table 8 lists the summary of the 38K0 group’s flash memory ver-

sion.

This flash memory version has some blocks on the flash memory

as shown in Figure 116 and each block can be erased. The flash

memory is divided into User ROM area and Boot ROM area.

In addition to the ordinary User ROM area to store the MCU op-

eration control program, the flash memory has a Boot ROM area

that is used to store a program to control rewriting in CPU rewrite

and standard serial I/O modes. This Boot ROM area has had a

standard serial I/O mode control program stored in it when

shipped from the factory. However, the user can write a rewrite

control program in this area that suits the user’s application sys-

tem. This Boot ROM area can be rewritten in only parallel I/O

mode.

Table 8 Summary of 38K0 group’s flash memory version

Notes 1: In the parallel I/O mode or the standard serial I/O mode, use the exclusive external equipment flash programmer which supports the 38K0 Group

(flash memory version).

2: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be re-

written in only parallel I/O mode.

Item

Power source voltage (Vcc)

Program/Erase VPP voltage (VPP)

Flash memory mode

Erase block division

User ROM area

Boot ROM area

Program method

Erase method

Program/Erase control method

Number of commands

Number of program/Erase times

Data retention period

ROM code protection

Specifications

3.00 – 5.25 V (L version) (Program and erase in 4.00 to 5.25 V of Vcc.)

3.00 – 4.00 V (L version) (Program and erase in 3.00 to 5.25 V of Vcc.)

4.50 – 5.25 V

3 modes; Flash memory can be manipulated as follows:

•CPU rewrite mode: Manipulated by the Central Processing Unit (CPU).

•Parallel I/O mode: Manipulated using an external programmer (Note 1)

•Standard serial I/O mode: Manipulated using an external programmer (Note 1)

1 block (32 Kbytes)

1 block (4 Kbytes) (Note 2)

Byte program

Batch erasing

Program/Erase control by software command

6 commands

100 times

10 years

Available in parallel I/O mode and standard serial I/O mode

M38K09RFS Datasheet(PDF) 99 Page - Renesas Technology Corp

M38K09RFS Datasheet(HTML) 99 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL