S1T8825X01-R0B0 datasheet(4/16 Pages) SAMSUNG

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S1T8825

1.1GHZ DUAL PLL

PRELINIMARY( VER.2.1 )

ELECTRICAL CHARACTERISTICS

(Ta = 25

°C, V

CC = 3V, unless otherwise specified)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Operating power supply

voltage

VCC

Fin1=Fin2= 200MHz ~ 550MHz

2.2

3.0

5.5

Fin1=Fin2= 550MHz ~ 1.1GHz

2.7

3.0

3.6

Operating current

consumption

ICC

Fin1=Fin2=1.1GHz/ -5dBm input

3.5

5.5

7.5

Standby current

ISB

Standby mode

−

µA

Fin operating frequency

Fin

Fin1 = Fin2 =

− 5dBm

200

−

1100

MHz

Fin input sensitivity

Fin

Fin1 = Fin2

= 200MHz

Vcc=2.2V

− 15

−

dBm

Vcc=3.0V

− 15

−

Vcc=5.5V

− 10

−

Fin1 = Fin2

= 550MHz

Vcc=2.2V

−15

−

Vcc=3.0V

−15

−

Vcc=5.5V

− 10

−

Fin1 = Fin2

= 1.1GHz

Vcc=2.7V

− 10

−

Vcc=3.0V

− 10

−

Vcc=3.6V

− 10

−

OSCI operating frequency

Fosc

VFin = 0dBm, sinewave

MHz

OSCI input voltage

Vosc

fosc = 10MHz

Vcc = 2.2V

− 10

dBm

Vcc = 3.0V

− 10

Vcc = 5.5V

fosc = 20MHz

Vcc = 2.2V

− 10

Vcc = 3.0V

− 10

Vcc = 5.5V

− 5

Serial data input high

voltage (CK, DATA, EN)

VIH

VCC = 2.2 to 5.5V

VCC −

0.4

−

Serial data input low voltage

(CK, DATA, EN)

VIL

VCC = 2.2 to 5.5V

−

0.4

Charge pump output

current

ICP1

CP1 = 0, CP2 = 0

VCP = 1.5 V

–

± 100

−

µA

ICP2

CP1 = 1, CP2 = 0

VCP = 1.5V

–

± 200

−

µA

ICP3

CP1 = 0, CP2 = 1

VCP = 1.5V

−

± 400

−

µA

ICP4

CP1 = 1, CP2 = 1

VCP = 1.5V

−

± 800

−

µA

Charge pump leakage

ICPL

Standby mode, Vcp = 1.5V

−1

−

µA

S1T8825X01-R0B0 Datasheet(PDF) 4 Page - Samsung semiconductor

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