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3.3-VLVCMOS Datasheet(PDF) 24 Page - Altera Corporation

Part # 3.3-VLVCMOS
Description  This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
PDF  34 Pages
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Manufacturer  ALTERA [Altera Corporation]
Direct Link  http://www.altera.com
Logo ALTERA - Altera Corporation

3.3-VLVCMOS Datasheet(HTML) 24 Page - Altera Corporation

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Chapter 1: Cyclone III Device Datasheet
Switching Characteristics
Cyclone III Device Handbook
July 2012
Altera Corporation
Volume 2
Table 1–34 lists the memory output clock jitter specifications for Cyclone III devices.
DDR2 SDRAM
SSTL-18 Class I
915
410
915
410
1015
510
SSTL-18 Class II
1025
545
1025
545
1125
645
DDR SDRAM
SSTL-2 Class I
880
340
880
340
980
440
SSTL-2 Class II
1010
380
1010
380
1110
480
QDRII SRAM
1.8 V HSTL Class I
910
450
910
450
1010
550
1.8 V HSTL Class II
1010
570
1010
570
1110
670
C8
DDR2 SDRAM
SSTL-18 Class I
1040
440
1040
440
1140
540
SSTL-18 Class II
1180
600
1180
600
1280
700
DDR SDRAM
SSTL-2 Class I
1010
360
1010
360
1110
460
SSTL-2 Class II
1160
410
1160
410
1260
510
QDRII SRAM
1.8 V HSTL Class I
1040
490
1040
490
1140
590
1.8 V HSTL Class II
1190
630
1190
630
1290
730
I7
DDR2 SDRAM
SSTL-18 Class I
961
431
961
431
1061
531
SSTL-18 Class II
1076
572
1076
572
1176
672
DDR SDRAM
SSTL-2 Class I
924
357
924
357
1024
457
SSTL-2 Class II
1061
399
1061
399
1161
499
QDRII SRAM
1.8 V HSTL Class I
956
473
956
473
1056
573
1.8 V HSTL Class II
1061
599
1061
599
1161
699
A7
DDR2 SDRAM
(2)
SSTL-18 Class I
1092
462
1092
462
1192
562
SSTL-18 Class II
1239
630
1239
630
1339
730
DDR SDRAM
SSTL-2 Class I
1061
378
1061
378
1161
478
SSTL-2 Class II
1218
431
1218
431
1318
531
QDRII SRAM
1.8 V HSTL Class I
1092
515
1092
515
1192
615
1.8 V HSTL Class II
1250
662
1250
662
1350
762
Notes to Table 1–33:
(1) Column I/O banks refer to top and bottom I/Os. Row I/O banks refer to right and left I/Os. Wraparound mode refers to the combination of column
and row I/Os.
(2) For DDR2 SDRAM write timing performance on Columns I/O for C8 and A7 devices, 97.5 degree phase offset is required.
Table 1–33. Cyclone III Devices Transmitter Channel-to-Channel Skew (TCCS) – Write Side (1)
(Part 2 of 2)
Memory
Standard
I/O Standard
Column I/Os (ps)
Row I/Os (ps)
Wraparound Mode (ps)
Lead
Lag
Lead
Lag
Lead
Lag
Table 1–34. Cyclone III Devices Memory Output Clock Jitter Specifications (1), (2) (Part 1 of 2)
Parameter
Symbol
Min
Max
Unit
Clock period jitter
tJIT(per)
-125
125
ps
Cycle-to-cycle period jitter
tJIT(cc)
-200
200
ps



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