W25Q80BVCIP datasheet(5/74 Pages) WINBOND

5 / 74 page

W25Q128BV

Publication Release Date: October 03, 2013

- 5 -

Revision H

1. GENERAL DESCRIPTION

The W25Q128BV (128M-bit) Serial Flash memory provides a storage solution for systems with limited

space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial

Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI

(XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with

current consumption as low as 4mA active and 1µA for power-down.

The W25Q128BV array is organized into 65,536 programmable pages of 256-bytes each. Up to 256

bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of

128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The

W25Q128BV has 4,096 erasable sectors and 256 erasable blocks respectively. The small 4KB sectors

allow for greater flexibility in applications that require data and parameter storage. (See Figure 2.)

The W25Q128BV supports the standard Serial Peripheral Interface (SPI), and a high performance

Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1

(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing

equivalent clock rates of 208MHz (104MHz x 2) for Dual Output and 280MHz (70MHz x 4) for Quad SPI

when using the Fast Read Quad SPI instructions. These transfer rates can outperform standard

Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient

memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true

XIP (execute in place) operation.

A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array

control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer

and device identification with a 64-bit Unique Serial Number.

2. FEATURES

 Family of SpiFlash Memories

– W25Q128BV: 128M-bit/16M-byte

– 256-byte per programmable page

– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold

– Dual SPI: CLK, /CS, IO

0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO

0, IO1, IO2, IO3

 Highest Performance Serial Flash

– 104/70MHz Dual Output/Quad SPI clocks

– 208/280MHz equivalent Dual /Quad SPI

– 35MB/S continuous data transfer rate

– Up to 5X that of ordinary Serial Flash

– More than 100,000 erase/program cycles

(1)

– More than 20-year data retention

 Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read with 8/16/32/64-Byte Wrap

– As few as 8 clocks to address memory

– Allows true XIP (execute in place) operation

– Outperforms X16 Parallel Flash

 Low Power, Wide Temperature Range

– Single 2.7 to 3.6V supply

– 4mA active current, <1µA Power-down current

– -40°C to +85°C operating range

 Flexible Architecture with 4KB sectors

– Uniform Sector/Block Erase (4K/32K/64K-Byte)

– Program one to 256 bytes

– Erase/Program Suspend & Resume

 Advanced Security Features

– Software and Hardware Write-Protect

– Top/Bottom, 4KB complement array protection

– Lock-Down and OTP array protection

– 64-Bit Unique Serial Number for each device

– Discoverable Parameters (SFDP) Register

– 3X256-Byte Security Registers with OTP locks

– Volatile & Non-volatile Status Register Bits

 Space Efficient Packaging

– 8-pad WSON 8x6-mm

– 16-pin SOIC 300-mil

– 24-ball TFBGA 5X5-mm & 8X6-mm

– Contact Winbond for KGD and other options

W25Q80BVCIP Datasheet(PDF) 5 Page - Winbond

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