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PM0059 Datasheet(PDF) 12 Page - STMicroelectronics

Part # PM0059
Description  This programming manual describes how to program
PDF  29 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PM0059 Datasheet(HTML) 12 Page - STMicroelectronics

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Flash memory interface
PM0059
12/29
DocID15687 Rev 5
2.5.2
Program/erase parallelism
The Parallelism size is configured through the PSIZE field in the FLASH_CR register. It
represents the number of bytes to be programmed each time a write operation occurs to the
Flash memory. PSIZE is limited by the supply voltage and by whether the external VPP
supply is used or not. It must therefore be correctly configured in the FLASH_CR register
before any programming/erasing operation.
A Flash memory erase operation can only be performed by sectors, bank or for the whole
Flash memory (mass erase). The erase time depends on PSIZE programmed value. For
more details on the erase time, refer to the electrical characteristics section of the device
datasheet.
Note:
Any program or erase operation started with inconsistent program parallelism/voltage range
settings may lead to unpredicted results. Even if a subsequent read operation indicates that
the logical value was effectively written to the memory, this value may not be retained.
To use VPP, an external high-voltage supply (between 8 and 9 V) must be applied to the VPP
pad. The external supply must be able to sustain this voltage range even if the DC
consumption exceeds 10 mA. It is advised to limit the use of VPP to initial programming on
the factory line. The VPP supply must not be applied for more than an hour, otherwise the
Flash memory might be damaged.
2.5.3
Erase
The Flash memory erase operation can be performed at sector level or on the whole Flash
memory (Mass Erase). Mass Erase does not affect the OTP sector or the configuration
sector.
Sector Erase
To erase a sector, follow the procedure below:
1.
Check that no Flash memory operation is ongoing by checking the BSY bit in the
FLASH_SR register
2.
Set the SER bit and select the sector (out of the 12 sectors in the main memory block)
you wish to erase (SNB) in the FLASH_CR register
3.
Set the STRT bit in the FLASH_CR register
4.
Wait for the BSY bit to be cleared
Table 4. Program/erase parallelism
Voltage range
2.7 - 3.6 V
with External
VPP
Voltage range
2.7 - 3.6 V
Voltage range
2.4 - 2.7 V
Voltage range
2.1 - 2.4 V
Voltage range
1.8 V - 2.1 V(1)
1. If IRROFF is set to VDD on STM32F20xx devices, this value can be lowered to 1.65 V when the device
operates in a reduced temperature range.
Parallelism
size
x64
x32
x16
x8
PSIZE(1:0)
11
10
01
00



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