TPL0102-100QPWREP datasheet(7/36 Pages) TI

7 / 36 page

100

105

115

125

Operating Junction Temperature (ºC)

C020

TPL0102-EP

www.ti.com

SLIS149 – JUNE 2014

Electrical Characteristics (continued)

VDD = 2.7 to 5.5 V, VSS = 0 V, VH= VDD, VL= GND, TJ = –40°C to 125°C (unless otherwise noted). Typical values are at

VDD = 5 V, TJ = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RHEOSTAT MODE (Measurements between W and L with H not connected, or between W and H with L not connected)

RINL(10)(11)

Integral non-linearity

–1

LSB

RDNL(10)(12)

Differential non-linearity

–0.5

0.5

LSB

ROFFSET

(13) (14)

Offset

0.2

LSB

RMATCH

(13) (15)

Channel-to-channel matching

–2

LSB

Code = 0x00h,

L Floating,

RBW

Bandwidth

TPL0102-100

kHz

Input applied to W, Measure

at H, CLOAD = 10 pF

(10) RLSB = (RMEAS[code 255] – RMEAS[code 0]) / 255

(11) RINL =( (RMEAS[code x] – RMEAS[code 0]) / RLSB) – [code x]

(12) RDNL =( (RMEAS[code x] – RMEAS[code x-1]) / RLSB ) – 1

(13) IDEAL_RLSB = RTOT / 256

(14) ROFFSET = RMEAS[code 0] / IDEAL_RLSB

(15) RMATCH = (RMEAS_A[code x] – RMEAS_B[code x]) / IDEAL_RLSB

(1)

See data sheet for absolute maximum and minimum recommended operating conditions.

(2)

Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

(3)

Enhanced plastic product disclaimer applies.

Figure 1. TPL0102-EP Electromigration Fail Mode/Wirebond Life Derating Chart

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