MCP2050-ESLASHP datasheet(24/40 Pages) MICROCHIP

24 / 40 page

MCP2050

DS20002299C-page 24

 2012-2014 Microchip Technology Inc.

2.4

AC Specifications

AC CHARACTERISTICS

Electrical Characteristics

: Unless otherwise indicated, all limits are specified for

VBB = 6.0V to 18.0V; TA = -40°C to +125°C

Parameter

Sym.

Min.

Typ.

Max.

Units

Test Conditions

Bus Interface - Constant Slope Time Parameters (DC specifications are for a VBB range of 6.0 to 18.0V)

Slope Rising and Falling

Edges

tSLOPE

3.5

—

22.5

µs

7.3V <= VBB <= 18V

Propagation Delay of

Transmitter

tTRANSPD

——

5.0

µs

tTRANSPD = max (tTRANSPDR or

tTRANSPDF)

Propagation Delay of

Receiver

tRECPD

——

6.0

µs

tRECPD = max (tRECPDR or

tRECPDF)

Symmetry of Propagation

Delay of Receiver Rising

Edge w.r.t. Falling Edge

tRECSYM

-2.0

—

2.0

µs

trecsym = max (tRECPDF –

tRECPDR)

RRXD 2.4 kΩ

to VCC,

CRXD 20pF

Symmetry of Propagation

Delay of Transmitter Rising

Edge w.r.t. Falling Edge

tTRANSSYM

-2.0

—

2.0

µs

tTRANSSYM = max (tTRANSPDF -

tTRANSPDR)

Bus Dominant Time-Out

Time

tTO(LIN)

—25

—

Time to Sample of

FAULT/TXE for Bus Conflict

Reporting

tFAULT

——

32.5

µs

tFAULT = max (tTRANSPD +

tSLOPE + tRECPD)

Duty Cycle 1 @ 20.0 kbit/sec

0.396

—

%tBIT

CBUS;RBUS conditions:

1nF; 1 kΩ | 6.8 nF;

660Ω |

10 nF; 500Ω

THREC(MAX) = 0.744 x VBB,

THDOM(MAX) = 0.581 x VBB,

VBB =7.0V - 18V; tBIT = 50 µs.

D1 = tBUS_REC(MIN) / 2 x tBIT)

Duty Cycle 2 @ 20.0 kbit/sec

—

0.581

%tBIT

CBUS;RBUS conditions:

1nF; 1 kΩ | 6.8 nF;

660Ω |

10 nF; 500Ω

THREC(MAX) = 0.284 x VBB,

THDOM(MAX) = 0.422 x VBB,

VBB =7.6V - 18V; tBIT = 50 µs.

D2 = tBUS_REC(MAX) / 2 x tBIT)

Duty Cycle 3 @ 10.4 kbit/sec

0.417

—

%tBIT

CBUS;RBUS conditions:

1nF; 1 kΩ | 6.8 nF;

660Ω |

10 nF; 500Ω

THREC(MAX) = 0.778 x VBB,

THDOM(MAX) = 0.616 x VBB,

VBB =7.0V - 18V; tBIT = 96 µs.

D3 = tBUS_REC(MIN) / 2 x tBIT)

Duty Cycle 4 @ 10.4 kbit/sec

—

0.590

%tBIT

CBUS;RBUS conditions:

1nF; 1 kΩ | 6.8 nF;

660Ω |

10 nF; 500Ω

THREC(MAX) = 0.251 x VBB,

THDOM(MAX) = 0.389 x VBB,

VBB =7.6V - 18V; tBIT = 96 µs.

D4 = tBUS_REC(MAX) / 2 x tBIT)

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