STM32L081CB datasheet(72/110 Pages) STMICROELECTRONICS

72 / 110 page

Electrical characteristics

STM32L081xx

72/110

DocID027513 Rev 4

IDD

Average current during

the whole programming /

erase operation

TA25 °C, VDD = 3.6 V

500

700

µA

Maximum current (peak)

during the whole

programming / erase

operation

-1.5

2.5

1. Guaranteed by design.

Table 47. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

NCYC(2)

Cycling (erase / write)



Program memory

TA-40°C to 105 °C

kcycles

Cycling (erase / write)



EEPROM data memory

100

Cycling (erase / write)



Program memory

TA-40°C to 125 °C

0.2

Cycling (erase / write)



EEPROM data memory

tRET(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

10 kcycles at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 100 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

TRET = +105 °C

Data retention (EEPROM data memory)

after 100 kcycles at TA = 105 °C

Data retention (program memory) after

200 cycles at TA = 125 °C

TRET = +125 °C

Data retention (EEPROM data memory)

after 2 kcycles at TA = 125 °C

Table 46. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

Unit

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