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STM32L081CB Datasheet(PDF) 48 Page - STMicroelectronics |
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STM32L081CB Datasheet(HTML) 48 Page - STMicroelectronics |
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48 / 110 page  Electrical characteristics STM32L081xx 48/110 DocID027513 Rev 4 6.3.3 Embedded internal reference voltage The parameters given in Table 23 are based on characterization results, unless otherwise specified. VPVD6 PVD threshold 6 Falling edge 2.97 3.05 3.09 V Rising edge 3.08 3.15 3.20 Vhyst Hysteresis voltage BOR0 threshold - 40 - mV All BOR and PVD thresholds excepting BOR0 -100 - 1. Guaranteed by characterization results. 2. Valid for device version without BOR at power up. Please see option "D" in Ordering information scheme for more details. Table 21. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 22. Embedded internal reference voltage calibration values Calibration value name Description Memory address VREFINT_CAL Raw data acquired at temperature of 25 °C VDDA= 3 V 0x1FF8 0078 - 0x1FF8 0079 Table 23. Embedded internal reference voltage(1) Symbol Parameter Conditions Min Typ Max Unit VREFINT out(2) Internal reference voltage – 40 °C < TJ < +125 °C 1.202 1.224 1.242 V TVREFINT Internal reference startup time - - 2 3 ms VVREF_MEAS VDDA voltage during VREFINT factory measure -2.99 3 3.01 V AVREF_MEAS Accuracy of factory-measured VREFINT value(3) Including uncertainties due to ADC and VDDA values -- ±5 mV TCoeff(4) Temperature coefficient –40 °C < TJ < +125 °C - 25 100 ppm/°C ACoeff(4) Long-term stability 1000 hours, T= 25 °C - - 1000 ppm VDDCoeff(4) Voltage coefficient 3.0 V < VDDA < 3.6 V - - 2000 ppm/V TS_vrefint(4)(5) ADC sampling time when reading the internal reference voltage -5 10 - µs TADC_BUF(4) Startup time of reference voltage buffer for ADC -- - 10 µs IBUF_ADC(4) Consumption of reference voltage buffer for ADC - - 13.5 25 µA IVREF_OUT(4) VREF_OUT output current(6) -- - 1 µA CVREF_OUT(4) VREF_OUT output load - - - 50 pF |
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