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STM32L081CB Datasheet(PDF) 49 Page - STMicroelectronics |
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STM32L081CB Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 110 page ![]() DocID027513 Rev 4 49/110 STM32L081xx Electrical characteristics 95 6.3.4 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 10: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to Dhrystone 2.1 code if not specified otherwise. The current consumption values are derived from the tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20: General operating conditions unless otherwise specified. The MCU is placed under the following conditions: All I/O pins are configured in analog input mode All peripherals are disabled except when explicitly mentioned The Flash memory access time and prefetch is adjusted depending on fHCLK frequency and voltage range to provide the best CPU performance unless otherwise specified. When the peripherals are enabled fAPB1 = fAPB2 = fAPB When PLL is on, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or HSE = 16 MHz (if HSE bypass mode is used) The HSE user clock applied to OSCI_IN input follows the characteristic specified in Table 37: High-speed external user clock characteristics For maximum current consumption VDD = VDDA = 3.6 V is applied to all supply pins For typical current consumption VDD = VDDA = 3.0 V is applied to all supply pins if not specified otherwise The parameters given in Table 44, Table 20 and Table 21 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20. ILPBUF(4) Consumption of reference voltage buffer for VREF_OUT and COMP - - 730 1200 nA VREFINT_DIV1(4) 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2(4) 1/2 reference voltage - 49 50 51 VREFINT_DIV3(4) 3/4 reference voltage - 74 75 76 1. Refer to Table 35: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current consumption (IREFINT). 2. Guaranteed by test in production. 3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes. 4. Guaranteed by design. 5. Shortest sampling time can be determined in the application by multiple iterations. 6. To guarantee less than 1% VREF_OUT deviation. Table 23. Embedded internal reference voltage(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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