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AS4SD16M16 Datasheet(PDF) 27 Page - Micross Components |
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AS4SD16M16 Datasheet(HTML) 27 Page - Micross Components |
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27 / 52 page ![]() SDRAM AS4SD16M16 AS4SD16M16 Rev. 2.6 04/13/15 Micross Components reserves the right to change products or specifications without notice. 27 *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity (plastics). ABSOLUTE MAXIMUM RATINGS* Voltage on V DD, VDDQ Supply Relative to V SS...................................-0.5V to +4.6V Voltage on Inputs, NC or I/O Pins Relative to V SS...................................-0.5V to +4.6V Operating Temperature, T A (IT)......................-40°C to +85°C Operating Temperature, T A (ET)..................-40°C to +105°C Operating Temperature, T A (XT)...................-55°C to +125°C Storage Temperature (plastic).......................-55°C to +150°C Power Dissipation..............................................................1W ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS1,5,6 (V DD, VDDQ = +3.3V ±0.3V) PARAMETER SYMBOL MIN MAX UNITS NOTES Supply Voltage VDD, VDDQ 3 3.6 V Input High Voltage: Logic 1; All inputs VIH 2.2 VDD+ 0.3 V 22 Input Low Voltage: Logic 0; All inputs VIL -0.3 0.8 V 22 Input Leakage Current: Any input 0V < VIN < VDD (All other pins not under test = 0V) II -5 5 µA Output Leakage Current: DQs are disabled: 0V < VOUT < VDDQ IOZ -5 5 µA Output Levels: Output High Voltage (IOUT = -4mA) VOH 2.4 --- V Output Low Voltage (IOUT = 4mA) VOL --- 0.4 V I DD SPECIFICATIONS AND CONDITIONS 1,5,6,11,13 (V DD, VDDQ = +3.3V ±0.3V) SYMBOL MAX (-75) UNITS NOTES IDD1 140 mA 3, 18, 19, 32 IDD2 3 mA 32 IDD3 45 mA 3, 12, 19, 32 IDD4 150 mA 3, 18, 19, 32 tRFC = tRFC (MIN) IDD5 300 mA tRFC = 7.81 µs IDD6 6 mA IDD7 4 mA 4, 35 SELF REFRESH CURRENT: CKE < 0.2V Operating Current: Burst Mode; Continuous Burst; READ or WRITE: All banks active Auto Refresh Current CS\ = HIGH; CKE = HIGH 3, 12, 18, 19, 32, 33 PARAMETER Operating Current: Active Mode; Burst = 2; READ or WRITE; tRC = tRC (MIN) Standby Current: Power-Down Mode; All banks idle; CKE = LOW Standby Current: Active Mode; CKE = HIGH; CS\ = HIGH; All banks active after tRCD met; No accesses in progress |
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