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DS4510U-5/T Datasheet(PDF) 6 Page - Maxim Integrated Products |
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DS4510U-5/T Datasheet(HTML) 6 Page - Maxim Integrated Products |
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6 / 12 page ![]() CPU Supervisor with Nonvolatile Memory and Programmable I/O 6 _____________________________________________________________________ Detailed Description The DS4510 contains a CPU supervisor, four program- mable I/O pins, and a 64-byte EEPROM memory. All functions are configurable or controllable through an industry-standard I2C-compatible bus. DS4510 NV reg- isters that are likely to require frequent modification are implemented using SRAM-shadowed EEPROM (SEEP- ROM) memory. This memory is configurable to act as volatile SRAM or NV EEPROM by adjusting the SEE bit in the Config register. Configuring the SEEPROM as SRAM eliminates the EEPROM write time and allows infinite write cycles to these registers. Configuring the registers as EEPROM allows the application to change the power-on values that are recalled during power-up. Programmable CPU Supervisor The timeout period is adjusted by writing the reset delay register (SEEPROM). The delay for each setting is shown in the CPU Supervisor AC Electrical Characteristics. If the SEE bit is set, changes are writ- ten to SRAM. On power-up the last value written to the EEPROM is recalled. The I2C bus is also used to acti- vate the RST by setting the SWRST bit in the Config register. This bit automatically returns to zero after the timeout period. The Config register also contains the ready, trip point, and reset status bits. The ready bit determines if the power-on reset level of the DS4510 is surpassed by VCC. The trip point bit determines if VCC is above VCCTP, and the reset status bit is set if RST is in its active state. Note: The RST pin is an open-drain output, therefore an external pullup resistor must be used to realize high logic levels. Programmable NV Digital I/O Pins Each programmable I/OX pin contains an input, open- collector output, and a selectable internal pullup resis- tor. The DS4510 stores changes to the I/OX pin in SEEPROM memory. Using the SEEPROM as SRAM is conducive to applications such as I/O expansion that generally require fast access times and frequent modi- fication of the I/OX pin. Configuring the SEEPROM to behave as EEPROM allows the modification of the power-on state of the I/OX pin. During power-up the I/OX pins are high impedance until VCC exceeds 2.0V (typically), which is when the last value programmed is recalled from EEPROM. On power-down, the I/OX state is maintained until VCC drops below 1.9V (typically). The internal pullups for each I/OX pin are controlled by the pullup-enable register (F0h). Similarly, the individual I/OX control registers (F4h to F7h) adjust the pulldown INTERNAL VOLTAGE REFERENCE VCC VCC VCC VCC 2-WIRE INTERFACE EEPROM 64 BYTES USER MEMORY PROGRAMMABLE RESET TIMER SCL SDA A0 GND RP 4 NV I/O PINS 4 BIDIRECTIONAL NONVOLATILE I/O LATCHES PULLUP ENABLE (F0h) I/OX CONTROL (F4h-F7h) I/O STATUS (F8h) 4x RST DS4510 Functional Diagram |
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