PIC12CE673-04SLASHP datasheet(83/116 Pages) MICROCHIP

83 / 116 page

Preliminary

DS40181B-page 83

PIC12CE67X

12.1

DC Characteristics:

PIC12CE673-04 (Commercial, Industrial, Extended(5))

PIC12CE673-10 (Commercial, Industrial, Extended(5))

PIC12CE674-04 (Commercial, Industrial, Extended(5))

PIC12CE674-10 (Commercial, Industrial, Extended(5))

These parameters are characterized but not tested.

†

Data in "Typ" column is at 5V, 25˚C unless otherwise stated. These parameters are for design guidance only

and are not tested.

Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin

loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an

impact on the current consumption.

The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD

MCLR = VDD; WDT enabled/disabled as speciﬁed.

The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

For EXTRC osc conﬁguration, current through Rext is not included. The current through the resistor can be

estimated by the formula Ir = VDD/2Rext (mA) with Rext in kOhm.

5: Extended operating range is Advance Information for this device.

6: INTRC calibration value is for 4 MHz nominal at 5V, 35

°C.

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise speciﬁed)

Operating temperature

0˚C

≤ TA ≤ +70˚C (commercial)

–40˚C

≤ TA ≤ +85˚C (industrial)

–40

°C ≤ TA ≤ +125˚C (extended)

Parm

No.

Characteristic

Sym Min Typ† Max Units

Conditions

D001

D001A

Supply Voltage

VDD

3.0

4.5

5.5

XT, INTRC, EXTRC and LP osc conﬁgura-

tion

HS osc conﬁguration

D002

RAM Data Retention

Voltage (Note 1)

VDR

1.5

Device in SLEEP mode

D003

VDD start voltage to

ensure internal Power-on

Reset signal

VPO

VSS

See section on Power-on Reset for details

D004

VDD rise rate to ensure inter-

nal Power-on Reset signal

SVD

0.05

V/ms See section on Power-on Reset for details

D010

D010A

D013

Supply Current (Note 2)

No read/write to EEPROM

peripheral

IDD

2.7

TBD

3.3

XT, EXTRC osc conﬁguration

(PIC12CE67X-04)

FOSC = 4 MHz, VDD = 5.5V (Note 4)

INTRC osc conﬁguration

FOSC = 4 MHz, VDD = 5.5V (Note 6)

HS osc conﬁguration (PIC12CE67X-10)

FOSC = 10 MHz, VDD = 5.5V

D028

∆IEE

0.1

0.2

VDD = 5.5V

SCL = 400 kHz

D020

D021

D021A

D021B

Power-down Current (Note 3) IPD

5.5

1.5

TBD

µA

VDD = 4.0V, WDT enabled, –40

°C to +85°C

VDD = 4.0V, WDT disabled, 0

°C to +70°C

VDD = 4.0V, WDT disabled, –40

°C to

+85

°C

VDD = 4.0V, WDT disabled, –40

°C to

+125

°C

PIC12CE673-04/P Datasheet(PDF) 83 Page - Microchip Technology

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