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ZXLD1370EST16TC Datasheet(PDF) 24 Page - Diodes Incorporated |
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ZXLD1370EST16TC Datasheet(HTML) 24 Page - Diodes Incorporated |
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24 / 40 page ![]() ZXLD1370 Document number: DS32165 Rev. 6 - 2 24 of 40 www.diodes.com December 2016 © Diodes Incorporated ZXLD1370 Application Information (Cont.) Junction Temperature Estimation Finally, the ZXLD1370 junction temperature can be estimated using the following equations: Total supply current of ZXLD1370: IQTOT ≈ IQ + f • QG Where IQ = total quiescent current IQ-IN + IQ-AUX Power consumed by ZXLD1370: PIC = VIN • (IQ + f • Qg) Or in case of separate voltage supply, with VAUX < 15V: PIC = VIN • IQ-IN + VAUX • (IQ-AUX + f • Qg) TJ = TA + PIC • JA = TA + PIC • (JC + CA) Where the total quiescent current IQTOT consists of the static supply current (IQ) and the current required to charge and discharge the gate of the power MOSFET. Moreover, the part of thermal resistance between case and ambient depends on the PCB characteristics. 0 0.5 1 1.5 2 2.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 Ambient temperature (°C) Figure 27 Power Derating Curve for ZXLD1370 Mounted on Test Board According to JESD51 |
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