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MXT1664T3-ABESSQTP Datasheet(PDF) 22 Page - Microchip Technology |
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MXT1664T3-ABESSQTP Datasheet(HTML) 22 Page - Microchip Technology |
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22 / 98 page ![]() MXT1664T3 2.0 DS40002054A-page 22 2018 Microchip Technology Inc. 2.5.4.1 Suggested Component Suppliers D1 is a Schottky Diode. Possible suppliers are shown in Table 2-2. : L1 is a 10 µH inductor. Possible suppliers are shown in Table 2-3. : When the Voltage Booster is run in low frequency mode, L1 is a 47 µH inductor. Possible suppliers are shown in Table 2-4. Q1 is an N-channel 20 V, 700 mA, MOSFET. Possible suppliers are shown in Table 2-5 on page 22. FIGURE 2-1: XVDD SUPPLY CIRCUIT Note 1: Do not fit capacitor Cboost but make provision for it next to the VREGBOOST pin. This capacitor may be required to minimize RF noise issues. 2: See Section 2.5.4.1 “Suggested Component Suppliers” for suggested suppliers for L1 and Q1. 3: To run the Voltage Booster in low frequency mode, a 47 µH inductor (in position L1) will need to be fitted to the boost circuit. VDDHV 1 3 D1 1 Q1 10uF 50V GND 22nF GND 10uH L1 XVDD GND 10 R 47 R 33pF GND 33pF 50V DNF - See note below Cboost GND 2.2uF TABLE 2-2: SUITABLE SCHOTTKY DIODE (D1) Manufacturer Device Various BAT54M3T5G Various 1N4148WX TABLE 2-3: SUITABLE 10 µH INDUCTORS (L1) Manufacturer Device Size Panasonic ELJFB100JF 1812 TDK MLZ1608M100WT 1812 TDK MLZ2012M100WT000 0805 TABLE 2-4: SUITABLE 47 µH INDUCTORS (L1) Manufacturer Device Size LTE NR3015T470M 1812 Chip1stop.com NR3015T470M 3 × 3 mm TABLE 2-5: SUITABLE MOSFETS (Q1) Manufacturer Device ON Semiconductor NTA4153NT1G ON Semiconductor 2N7002ET1G Toshiba SSM3K56FS |
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