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STM32H723VG Datasheet(PDF) 96 Page - STMicroelectronics |
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STM32H723VG Datasheet(HTML) 96 Page - STMicroelectronics |
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96 / 227 page ![]() Electrical characteristics STM32H723xE/G 96/227 DS13313 Rev 2 6.3.6 Embedded USB regulator characteristics The parameters given in Table 19 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 12: General operating conditions. 6.3.7 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 11: Current consumption measurement scheme. All the run-mode current consumption measurements given in this section are performed with a CoreMark code. VREFINT_DIV1 1/4 reference voltage - - 25 - % VREFINT VREFINT_DIV2 1/2 reference voltage - - 50 - VREFINT_DIV3 3/4 reference voltage - - 75 - 1. The shortest sampling time for the application can be determined by multiple iterations. 2. Guaranteed by design. 3. Guaranteed by design. and tested in production at 3.3 V. Table 17. Embedded reference voltage (continued) Symbol Parameter Conditions Min Typ Max Unit Table 18. Internal reference voltage calibration values Symbol Parameter Memory address VREFIN_CAL Raw data acquired at temperature of 30 °C, VDDA = 3.3 V 1FF1 E860 - 1FF1 E861 Table 19. USB regulator characteristics Symbol Parameter Conditions Min Typ Max Unit VREGOUTV33V Regulated output voltage - 3 - 3.6 V IOUT Output current load sinked by USB block -- - 20 mA TWKUP Wakeup time - - 120 170 us |
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