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MPC5675KFF0VMS2R Datasheet(PDF) 91 Page - NXP Semiconductors

Part # MPC5675KFF0VMS2R
Description  MPC5675K Microcontroller
PDF  147 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MPC5675KFF0VMS2R Datasheet(HTML) 91 Page - NXP Semiconductors

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Electrical characteristics
MPC5675K Microcontroller Data Sheet, Rev. 9
NXP Semiconductors
91
4VIL_C
CC CMOS input buffer low voltage
(hysteresis enabled)
VSS – 0.3
0.35 × VDD_HV_PDI
V
5VIL_C
CC CMOS input buffer low voltage
(hysteresis disabled)
VSS – 0.3
0.42 × VDD_HV_PDI
V
6VHYS_C
CC CMOS input buffer hysteresis
0.1 × VDD_HV_PDI
—V
7IACT_S
CC Selectable weak pullup/pulldown current
25
150
µA
8VOH
CC Output high voltage
0.8 × VDD_HV_PDI
—V
9VOL
CC Output low voltage
—
0.2 × VDD_HV_PDI
V
1
Over- and undershoots occurring due to impedance mismatch of the external driver and the transmission line at
PDI pads in input mode can be allowed up to 0.7 V repeatedly throughout the product expected lifetime and will not
cause any long term reliability issue.
Table 39. Drive current
Pad
Drive Mode
Minimum IOH (mA)
1
1 I
OH is defined as the current sourced by the pad to drive the output to VOH.
Minimum IOL (mA)
2
2 I
OL is defined as the current sunk by the pad to drive the output to VOL.
PDI Fast
All
26.2
84.8
PDI Medium
All
19.2
52.1
Table 40. PDI pads AC electrical characteristics
No.
Name
Prop. Delay (ns)
L
→ H/H → L1
Rise/Fall Edge
(ns)
Drive Load
(pF)
Drive/Slew
Rate Select
MinMax
MinMax
MSB, LSB
1
PDI Medium
0.8/0.7
--------
1.1/1.08
5.5/4.5
1.02/1
—
50
11
12/8.3
3.5/2.3
200
49/22
9.1/6
50
10
60/31
14/9.2
200
102/44
18/12
50
01
119/53
24/16
200
722/302
126/85
50
00
772/325
136/90
200
Table 38. PDI pads DC electrical characteristics1 (continued)
No.
Symbol
Parameter
Min
Max
Unit



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