Rev. 05, 2023-07-10

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The information in this document is subject to change without notice.

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Thermally-Enhanced High Power RF LDMOS FET

200 W, 50 V, 960 – 1600 MHz

Description

The PTVA102001EA is a 200-watt LDMOS FET intended for use in power

amplifier applications in the 960 to 1600 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down

flange. Manufactured with Wolfspeed's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability.

PTVA102001EA

Package H-36265-2

Features

• Input matched

• Capable of handling 10:1 VSWR @50 V, 200 W (CW)

output power

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

10

20

30

40

50

60

70

35

40

45

50

55

60

65

20

25

30

35

40

PIN (dBm)

Power Sweep, Pulsed RF

VDD = 50 V, IDQ = 100 mA, TCASE = 25°C,

300µs pulse width, 10% duty cycle

1030 MHz

1090 MHz

1030 MHz

1090 MHz

Efficiency

Output Power

a102001ea_300us_g1

RF Characteristics

Pulsed RF Performance (tested in Wolfspeed production test fixture)

VDD = 50 V, IDQ = 100 mA, POUT = 200 W, ƒ = 1090 MHz, 300 µs pulse width, 10% duty cycle

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

17

18.5

—

dB

Drain Efficiency

hD

56

59.5

—

%

PTVA102001EA

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!