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SST39VF6401B Datasheet(PDF) 14 Page - Microchip Technology |
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SST39VF6401B Datasheet(HTML) 14 Page - Microchip Technology |
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14 / 38 page ![]() ©2015-2018 DS20005008C 14 64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Not Recommended for New Designs 7. The device does not remain in Software Product ID Mode if powered down. 8. With AMS-A1 =0; Manufacturer ID = 00BFH, is read with A0 = 0, SST39VF6401B Device ID = 236DH, is read with A0 = 1, SST39VF6402B Device ID = 236CH, is read with A0 = 1. AMS = Most significant address AMS = A21 for SST39VF640xB 9. Both Software ID Exit operations are equivalent 10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1) using the Sec ID mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H. Table 7: CFI Query Identification String1 for SST39VF640xB 1. Refer to CFI publication 100 for more details. Address Data Data 10H 0051H Query Unique ASCII string “QRY” 11H 0052H 12H 0059H 13H 0002H Primary OEM command set 14H 0000H 15H 0000H Address for Primary Extended Table 16H 0000H 17H 0000H Alternate OEM command set (00H = none exists) 18H 0000H 19H 0000H Address for Alternate OEM extended Table (00H = none exits) 1AH 0000H T7.0 25008 Table 8: System Interface Information for SST39VF640xB Address Data Data 1BH 0027H VDD Min (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1CH 0036H VDD Max (Program/Erase) DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts 1DH 0000H VPP min. (00H = no VPP pin) 1EH 0000H VPP max. (00H = no VPP pin) 1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs) 20H 0000H Typical time out for min. size buffer program 2N µs (00H = not supported) 21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms) 22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms) 23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs) 24H 0000H Maximum time out for buffer program 2N times typical 25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms) 26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms) T8.0 25008 |
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