NXP Semiconductors

SL3S1005

UCODE 9xm

8 Mechanical specification

UCODE 9xm wafers are available in 120 µm thickness. The 120 µm thick wafer includes a 10 µm Polyimide

spacer resulting in less coupling between the antenna and the active circuit, leaving more room for process

control (for example, pressure).

8.1 Wafer specification

8.1.1 12-inch wafer

See [3].

Wafer

Designation

each wafer is scribed with batch number and

wafer number

Diameter

300 mm (12") unsawn

Thickness

120 µm ± 15 µm

Number of pads

4

Pad location

nondiagonal / placed in chip corners

Process

CMOS 0.14 µm

Batch size

25 wafers

Net printed dies per wafer

242104

Wafer backside

Material

Si

Treatment

ground and stress release

Roughness

Ra max. 0.5 µm, Rt max. 5 µm

Chip dimensions

Die size excluding scribe

0.525 mm × 0.51 mm = 0.268 mm2

X-dimension = 8.6 µm

Scribe line width:

Y-dimension = 8.6 µm

Passivation on front

Type

Sandwich structure

Material

PE-Oxide (on top)

Thickness

2.25 µm total thickness of passivation

Polyimide spacer

10 µm ± 2 µm

Au pads

Pad material

> 99.9 % pure Au

Pad hardness

35 – 80 HV 0.005

Pad shear strength

> 70 MPa

Pad height

3 µm

Table 3. 12-inch specification, plasma diced

SL3S1005

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© 2025 NXP B.V. All rights reserved.

Product data sheet

Rev. 3.1 — 12 February 2025

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