CAB3R5M12DM4

3

Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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Module Physical Characteristics

Parameter

Symbol Min. Typ. Max. Unit Test Conditions

Package Resistance, M1 (High-Side)

R

3-1

0.41

mΩ

TC = 125°C, Note 6

Package Resistance, M2 (Low-Side)

R

1-2

0.56

TC = 125°C, Note 6

Stray Inductance

LStray

10.9

nH

Between DC- and DC+, f = 10 MHz

Case Temperature

TC

-40

125

°C

Mounting Torque

MS

1.1

2.3

N-m Baseplate, M4 bolts

Weight

W

41

g

Case Isolation Voltage

Visol

4

kV

AC, 50 Hz, 1 minute

Comparative Tracking Index

CTI

600

Clearance Distance

4.2

mm

Terminal to Terminal

13.4

Terminal to Heatsink

Creepage Distance

8.8

Terminal to Terminal

15.5

Terminal to Heatsink

Note (6): Total Effective Resistance (Per Switch Position) = MOSFET R

DS(on) + Switch Position Package Resistance

Diode Characteristics (Per Position) (TVJ = 25 °C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit Test Conditions

Notes

Body Diode Forward Voltage

VSD

6.2

V

VGS = -4 V, ISD = 311 A

Fig. 7

5.7

VGS = -4 V, ISD = 311 A, TVJ = 175 °C

DC Source-Drain Current (Body Diode)

IBD

192

A

VGS = -4 V, TC= 25 ˚C, TVJ ≤ 175 ˚C

131

VGS = -4 V, TC= 90 ˚C, TVJ ≤ 175 ˚C

Reverse Recovery Time

tRR

38.3

ns

VGS = -4 V, ISD = 300 A, VR = 600 V

di/dt = 19.3 A/ns, TVJ = 175 °C

Fig. 31

Reverse Recovery Charge

QRR

6.2

μC

Peak Reverse Recovery Current

IRRM

269

A

Reverse Recovery Energy, TVJ = 25 °C

TVJ = 125 °C

TVJ = 175 °C

ERR

1.1

1.6

2.6

mJ

VDD = 600 V, ID = 300 A,

VGS = -4 V/15 V, RG(ON)= 0 Ω,

Lσ = 17.4 nH

Fig. 14