CAB3R5M12DM4

4

Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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Typical Performance

Figure 1. Output Characteristics for Various Junction

Temperatures

Figure 2. Normalized On-State Resistance vs. Drain Current for

Various Junction Temperatures

Figure 3. Normalized On-State Resistance vs. Junction

Temperature

Figure 4. Transfer Characteristic for Various Junction

Temperatures

Figure 5. 3rd Quadrant Characteristic vs. Junction

Temperatures at VGS = 15 V

Figure 6. 3rd Quadrant Characteristic vs. Junction

Temperatures at VGS = 0 V (Body Diode)

0

100

200

300

400

500

600

0

1

2

3

4

Drain-Source Voltage, VDS (V)

125 °C

25 °C

100 °C

-40 °C

150 °C

175 °C

Conditions:

tp <

VGS =

300 µs

15 V

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

100

200

300

400

500

600

Drain-Source Current, IDS (A)

Conditions:

tp <

VGS =

300 µs

15 V

25 °C

100 °C

125 °C

150 °C

-40 °C

175 °C

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

0

25

50

75

100

125

150

175

200

Virtual Junction Temperature, TVJ (°C)

Conditions:

tp <

VGS =

ID =

300 µs

15 V

300 A

0

100

200

300

400

500

600

0

1.5

3

4.5

6

7.5

9

Gate-Source Voltage, VGS (V)

Conditions:

tp <

VDS =

300 µs

20 V

-25 °C

-40 °C

0 °C

25 °C

100 °C

125 °C

150 °C

175 °C

0

100

200

300

400

500

600

0

1

2

3

4

Source-Drain Voltage, VSD (V)

Conditions:

tp <

VGS =

300 µs

15 V

150 °C

125 °C

25 °C

100 °C

-40 °C

175 °C

0

100

200

300

400

500

600

0

1

2

3

4

5

6

7

Source-Drain Voltage, VSD (V)

Conditions:

tp <

VGS =

300 µs

0 V

175 °C

25 °C

125 °C