CAB3R5M12DM4

8

Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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Timing Characteristics

tf

tr

tdon

tdoff

0

20

40

60

80

100

120

140

160

0

50

100

150

200

Junction Temperature, TVJ (°C)

Conditions:

IS = 300 A

VDS = 600 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

di/dtOFF

di/dtON

dv/dtOFF

dv/dtON

0

5

10

15

20

25

30

35

40

45

50

0

50

100

150

200

Junction Temperature, TVJ (°C)

Conditions:

IS = 300 A

VDS = 600 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

tf

tr

tdon

tdoff

0

20

40

60

80

100

120

140

160

0

100

200

300

400

500

600

700

Source Current, IS (A)

Conditions:

TVJ = 25 °C

VDS = 600 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

tf

tr

tdon

tdoff

0

100

200

300

400

500

600

700

800

0

2

4

6

8

10

12

External gate Resistor, RG(ext) (Ω)

Conditions:

TVJ = 25 °C

IS = 300 A

VDS = 600 V

VGS = -4/+15 V

dv/dtOFF

di/dtON

di/dtOFF

dv/dtON

0

5

10

15

20

25

30

35

40

45

50

0

2

4

6

8

10

External gate Resistor, RG(ext) (Ω)

Conditions:

TVJ = 25 °C

IS = 300 A

VDS = 600 V

VGS = -4/+15 V

di/dtOFF

di/dtON

dv/dtOFF

dv/dtON

0

5

10

15

20

25

30

35

40

45

50

0

100

200

300

400

500

600

700

Source Current, IS (A)

Conditions:

TVJ = 25 °C

VDS = 600 V

RG(ext) = 0.0 Ω

VGS = -4/+15 V

Figure 23. Timing vs. Source Current

Figure 24. dv/dt and di/dt vs. Source Current

Figure 25. Timing vs. Junction Temperature

Figure 26. dv/dt and di/dt vs. Junction Temperature

Figure 27. Timing vs. External Gate Resistance

Figure 28. dv/dt and di/dt vs. External Gate Resistance