Rev. 1, DECEMBER 2024

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The information in this document is subject to change without notice.

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CAB3R5M12DM4

Technica Features

• Ultra-Low Loss

• High Frequency Operation

• Light Weight AlSiC Baseplate

• Zero Turn-Off Tail Current from MOSFET

• Normally-Off, Fail-Safe Device Operation

Typical Applications

• e-Mobility and Motor Drives

• EV Chargers

• High-Efficiency Converters / Inverters

• Renewable Energy

1200 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

VDS

1200 V

IDS

300 A

System Benefits

• Enables Compact, Lightweight Systems

• Increased System Efficiency, due to Low Switching

& Conduction Losses of SiC

• Reduced Thermal Requirements and System Cost

Key Parameters

Parameter

Symbol Min. Typ. Max. Unit Test Conditions

Note

Drain-Source Voltage

VDS

1200

V

Gate-Source Voltage, Maximum Value

VGS(max)

-8

+19

Transient

Fig. 32

Note 1

Gate-Source Voltage, Recommended

VGS(op)

-4/+15

Static

DC Continuous Drain Current (T

VJ < 175 °C)

ID

383

A

VGS = 15 V, TC = 25 °C, TVJ ≤ 175 °C

Notes

2, 3, 5

Fig. 20

293

VGS = 15 V, TC = 90 °C, TVJ ≤ 175 °C

Pulsed Drain Current

IDM

766

tPmax limited by TVJmax

VGS = 15 V, TC = 25 °C

Power Dissipation

PD

980

W

TC = 25 °C, TVJ ≤ 175 °C

Fig. 21

Note 4

Operational Virtual Junction Temperature

TVJ(op)

-40

175

°C

Note (1): Recommended turn-on gate voltage is 15 V with ±5% regulation tolerance

Note (2): Current limit calculated by ID(max) = √(PD / RDS(typ)(TVJ(max),ID(max)))

Note (3): Verified by design

Note (4): PD = (TVJ – TC) / RTH(JC,typ)

Note (5): Please refer to Application Note, PRD-07635, for guidance on PCB ampacity

5

5

4

4

3

3

2

2

1

1

D

D

C

C

B

B

A

A

3

4

5

1

6

7

2

V+

Mid

V-

G1

K1

G2

K2