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L99DZ80EP Datasheet(PDF) 66 Page - STMicroelectronics |
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L99DZ80EP Datasheet(HTML) 66 Page - STMicroelectronics |
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66 / 68 page  Revision history L99DZ80EP 66/68 DocID18260 Rev 6 06-Apr-2011 3 Table 8: Supply: –IVCC(stby): changed TBD at 6 µA and updated VCC from 5.1 V t0 5.0 V; added test condition for VCC = 5.3 V Table 9: Overvoltage and undervoltage detection: –VVCCRESHU, VVCCRESHD: updated max value –VVCCRES hysth: updated test condition Table 12: On-resistance: –IQLL: updated max value for OUT1-6 and typ, min, max for ECFD Table 13: Power outputs switching times: –td ON H: updated min value for all OUT except OUT7,8 –dVOUT/dt: updated min value Table 15: Gate drivers for the external Power-MOS (H-bridge): –IpdGSHx: removed row –RGHx, RGLx: updated min, typ and max values Table 18: Open-load monitoring: –VODSL: added min and max values, updated typ value –VODSH: added min and max values Table 19: Electrochrome mirror driver: – DNLECV, DNLECFD: added note Table 20: Delay time from Standby to Active mode: –tset: updated max value Table 46. Document revision history (continued) Date Revision Change |
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