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RP515K103C Datasheet(PDF) 7 Page - Nisshinbo Micro Devices Inc. |
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RP515K103C Datasheet(HTML) 7 Page - Nisshinbo Micro Devices Inc. |
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7 / 32 page ![]() RP515x No.EA-505-251006 7 ELECTRICAL CHARACTERISTICS The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. RP515x Electrical Characteristics: DC/DC Section (Ta = 25 C) Symbol Parameter Condition Min. Typ. Max. Unit VOUT Output voltage VIN = VCE1 = 3.6 V (VSET ≤ 2.6 V), VIN = VCE1 = VSET +1 V (VSET > 2.6 V) VSET ≥ 1.2 V x 0.985 x 1.015 V VSET < 1.2 V − 0.018 +0.018 IQ Operating quiescent current VIN = VCE1 = VOUT = 5.5 V, VSET = 1.8 V at rest 0.3 A ISTANDBY Standby current VIN = 5.5 V, VCE1 = 0 V 0.01 1 A ICE1H CE1 pin input current, high VIN = VCE1 = 5.5 V −0.025 0 0.025 A ICE1L CE1 pin input current, low VIN = 5.5 V, VCE1 = 0 V −0.025 0 0.025 A IVOUTH VOUT pin input current, high(1) VIN = VOUT = 5.5 V, VCE1 = 0 V −0.025 0 0.025 A IVOUTL VOUT pin input current, low VIN = 5.5 V, VCE1 = VOUT = 0 V −0.025 0 0.025 A RDISN Auto-discharge NMOS on-resistance (2) VIN = 3.6 V, VCE1 = 0 V 60 Ω VCE1H CE1 pin input voltage, high 1.8 V ≤ VIN ≤ 5.5 V 1.0 V VCE1L CE1 pin input voltage, low 1.8 V ≤ VIN ≤ 5.5 V 0.4 V RONP PMOS on-resistance RP515Z VIN = 3.6 V, ILX = −100 mA 0.15 Ω RP515K 0.19 RONN NMOS on-resistance RP515Z VIN = 3.6 V, ILX = −100 mA 0.15 Ω RP515K 0.19 tSTART Soft-start time VIN = VCE1 = 3.6 V (VSET ≤ 2.6 V), VIN = VCE1 = VSET + 1 V (VSET > 2.6 V) 10 ms ILXLIM LX current limit VIN = VCE1 = 3.6 V (VSET ≤ 2.6 V), VIN = VCE1 = VSET + 1 V (VSET > 2.6 V) 300 580 mA VUVLOF Undervoltage lockout (UVLO) threshold voltage VIN = VCE1, falling 1.40 1.50 1.65 V VUVLOR VIN = VCE1, rising 1.55 1.65 1.80 V All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C). (1) RP515xxxxC only (2) RP515xxxxD only |
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