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RP515K103C Datasheet(PDF) 8 Page - Nisshinbo Micro Devices Inc. |
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RP515K103C Datasheet(HTML) 8 Page - Nisshinbo Micro Devices Inc. |
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8 / 32 page ![]() RP515x No.EA-505-251006 8 ELECTRICAL CHARACTERISTICS (Continued) The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. RP515x Electrical Characteristics: Battery Monitor Section (Ta = 25 C) Symbol Parameter Condition Min. Typ. Max. Unit VBM Output voltage RP515xxx3x VIN = 5.5 V, −10 μA ≤ IBM ≤ 10 μA VIN/3-30 VIN/3 VIN/3+30 mV RP515xxx4x VIN/4-30 VIN/4 VIN/4+30 IBM Output current VIN = 5.5 V −10 10 µA ISSBM Supply current VIN = VCE2 =5.5 V, IBM = 0 μA 0.1 µA VCE2H CE2 pin input voltage, high 1.8 V ≤ VIN ≤ 5.5 V 1.0 V VCE2L CE2 pin input voltage, low 1.8 V ≤ VIN ≤ 5.5 V 0.4 V RDISNBM Auto-discharge NMOS on-resistance VIN = 4.0 V, VCE2 = 0 V 50 Ω All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C). |
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